List of Publications
Due to the usual copyright restrictions I'm not allowed to offer these
publications on the web. If you are interested in some of them,
please send me an email,
and I'll send you reprints.
The annual reports of the Institute of Semiconductor Electronics in Aachen
should be
requested there.
Some of my co-authors can be reached by email; I've added the appropiate
hyperlinks.
I did not try to include graphics for all the math symbols in the titles
of my papers, nor did I know about HTML3 when I started
this one.
If you wonder what InGaAs/InGaAs might be, you should simply
request a reprint.
The status of my actual paper
Shallow strained InGaAs/InGaAs superlattices
embedded in p-i-n diodes: Structural properties
and optical response
can be
requested
at the Pysical Review B editorial office. (Should be out soon, reviewers
comments were positive)
Contents of this page
Dissertation
Review Papers
Regular Papers
Reviewed Conference Papers
Other Conference Contributions
Technical Reports
Dissertation
- 1
-
R. Schwedler, Grundlagen und Charakterisierung von Wannier--Stark Modulatoren,
PhD Thesis, RWTH, Faculty for Electronic Engineering, Aachen (1995),
Verlag Shaker, Aachen.
Review Papers
- 2
-
R. Schwedler, H. Mikkelsen, K. Wolter, D. Laschet, J. Hergeth and H. Kurz,
InGaAs/InP multiple quantum well modulators in experiment and theory, J. de
Physique III France 4, 2341 (1994).
- 3
-
R. Kersting, R. Schwedler, A. Kohl, K. Leo and H. Kurz, Ultrafast carrier
dynamics in InGaAs/InP heterostructures, Optical and Quantum
Electronics, Special Issue on Carrier Transport in Quantum Well Lasers
26, S705 (1994).
Regular Papers
- 4
-
F. Royo,
R. Schwedler,
J. Camassel,
R. Meyer,
H. Hardtdegen,
B. Fraisse,
Shallow Strained InGaAs/InGaAs Superlattices
Embedded in PIN Diodes: Structural Properties and
Optical Response,
Phys. Rev. B, submitted.
- 4a
-
R. Schwedler, A. Ziebell, F. Brüggemann, B. Opitz, A. Kohl, H. Kurz,
Band structure and electro-optical
properties of mixed type-I/type-II InGaAs/InGaAs superlattices,
Phys. Rev. B 52 (16), 12108 (1995).
- 5
-
R. Schwedler, F. Brüggemann, C. Jaekel, A. Kohl, S. Brittner and H. Kurz,
Quantitative comparison of mass spectrometry and photoluminescence on
InAsP/InP multiple quantum well structures, Mat. Sci. Eng. B
28(1-3), 319 (1994).
- 6
-
R. Schwedler, F. Brüggemann, A. Ziebell, B. Opitz, A. Kohl and H. Kurz,
Valence band structure of fractional Wannier-Stark-Effect shallow
InGaAs/InGaAs superlattices, Superlattices Microstructures 15(2), 145
(1994).
- 7
-
T. Dekorsy, P. Leisching, W. Beck, Y. Dhaibi, R. Schwedler, K. Köhler, H. G. Roskos and H. Kurz, Internal field dynamics of coherent Bloch oscillations
in superlattices, Superlattices Microstructures 15(1), 11 (1994).
- 8
-
P. Leisching, P. Haring Bolivar, R. Schwedler, K. Leo, H. Kurz, K. Köhler
and P. Ganser, Investigation of Bloch oscillations in a GaAs/AlGaAs
superlattice by spectrally resolved four-wave mixing, Semicond. Sci.
Technol. 9, 419 (1994).
- 9
-
H. G. Roskos, C. Waschke, R. Schwedler, P. Leisching, Y. Dhaibi, H. Kurz and
K. Köhler, Bloch oscillations in GaAs/AlGaAs superlattices after
excitation well above the bandgap, Superlattices Microstructures 15(3),
281 (1994).
- 10
-
F. Royo, R. Meyer, B. Fraisse, R. Schwedler, H. Hardtdegen and J. Camassel,
Structural investigations of InGaAs/InGaAs SLSs for optoelectronic device
applications, Superlattices Microstructures 15(2), 187 (1994).
- 11
-
C. Waschke, P. Leisching, P. Haring Bolivar, R. Schwedler, F. Brüggemann,
H. G. Roskos, K. Leo, H. Kurz and K. Köhler, Detection of Bloch
oscillations in a semiconductor superlattice by time-resolved terahertz
spectroscopy and degenerate four-wave mixing, Solid-State Electronics
37(4-6), 1321 (1994).
- 12
-
R. Schwedler, F. Brüggemann, A. Kohl, K. Wolter, K. Leo and H. Kurz,
Type-I and type-II Wannier-Stark effect in InGaAs/InGaAs
superlattices, Appl. Phys. A 57(2), 199 (1993).
- 13
-
R. Schwedler, F. Brüggemann, B. Opitz, A. Kohl, K. Wolter, K. Leo and
H. Kurz, Observation of type-I and type-II Wannier-Stark effect in
InGaAs/InGaAs superlattices, J. Physique IV 3(5), 445 (1993).
- 14
-
C. Waschke, H. G. Roskos, R. Schwedler, K. Leo, H. Kurz and K. Köhler,
Coherent submillimeter-wave emission from Bloch oszillations in a
semiconductor superlattice, Phys. Rev. Lett. 70(21), 3319 (1993).
- 15
-
P. Leisching, P. Haring Bolivar, W. Beck, Y. Dhaibi, F. Brüggemann,
R. Schwedler, H. Kurz, K. Leo and K. Köhler, Bloch oscillations of
excitonic wave-packets in semiconductor superlattices, Phys. Rev. B
50(10), 14389 (1994).
- 16
-
J. Camassel, S. Juillaguet, R. Schwedler, K. Wolter, F. H. Baumann, K. Leo and
J. P; Laurenti, Morphology of InGaAs/InP QWs: from exciton spectroscopy
to HR-TEM analyses, J. Physique IV 3(5), 99 (1993).
- 17
-
A. Kohl, S. Juillaguet, B. Fraisse, R. Schwedler, F. Royo, H. Peyre,
F. Brüggemann, K. Wolter, K. Leo, H. Kurz and J. Camassel, Growth and
characterization of InGaAs/InGaAs
strained-layer superlattices, Mat. Sci. Eng. B 21(2-3), 244 (1993).
- 18
-
J. Camassel, K. Wolter, S. Juillaguet, R. Schwedler, E. Massone, B. Gallmann
and J. P; Laurenti, Evidence for nonuniform interface thickness in strained
GaInAs/InP quantum wells, Mat. Sci. Eng. B 20, 62 (1993).
- 19
-
K. Leo, P. H. Bolivar, F. Brüggemann, R. Schwedler and K. Köhler,
Observation of Bloch oszillations in a semiconductor superlattice, Solid
State Comm. 84(10), 943 (1992).
- 20
-
R. Kersting, R. Schwedler, K. Wolter, K. Leo and H. Kurz, Dynamics of carrier
transport and capture in InGaAs/InP heterostructures, Phys.\
Rev. B 46(3), 1639 (1992).
- 21
-
R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz and F. H.
Baumann, Interface properties of strained InGaAs/InP quantum wells grown by
LP-MOVPE, Mat. Sci. Eng. B 20, 66 (1993).
- 22
-
R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet,
J. Camassel, J. P. Laurenti and F. H. Baumann, Interface properties of
strained InGaAs/InP quantum wells grown by LP-MOVPE, Microelectronic
Engineering 19, 891 (1992).
- 23
-
R. Schwedler, H. Mikkelsen, R. Kersting, D. Laschet, A. Kohl, K. Wolter, K. Leo
and H.Kurz, Electro-optic characterization of InGaAs/InP MQW p-i-n
modulator structures, Microelectronic Engineering 19, 895 (1992).
- 24
-
R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet,
E. Massone, J. Camassel, J. P; Laurenti and F. H. Baumann, Interface
characterization of strained InGaAs/InP quantum wells after a growth
interruption sequence, Appl. Surf. Sci. 63, 187 (1993).
- 25
-
R. Schwedler, F. Reinhardt, D. Grützmacher and K. Wolter, Temperature
resolved photoluminescence investigations on InGaAs/InP MQW's, J. Crys.
Growth 107(1-4), 531 (1991).
- 26
-
R. Schwedler, K. Wolter, B. Gallmann, D. Grützmacher, M. Stollenwerk and
H. Kurz, Optical characterization of indium-rich strained InGaAs/InP
single- and multiple-quantum well structures, Mat. Sci. Eng. B
9(1-3), 297 (1991).
Reviewed Conference Papers
- 27a
-
R. Schwedler,
J.~Allègre,
J. Camassel
and I.~Grzegory,
Time resolved spectroscopy of the yellow luminescence band in
GaN bulk single crystals,
Proc.~ICPS XXIII, submitted.
- 27
-
F. Royo, J. Camassel, R. Schwedler, B. Fraisse and A. D. Smith, Optical
properties of high quality strain-compensated InGaAs/InGaAs
superlattices grown on InP, in: Semiconductor Heteroepitaxy - Growth,
Characterization and Device Applications, pp. 502-505, edited by
B. Gil and R.-L. Aulombard, World Scientific (1995).
- 28
-
J. Camassel, T. Talercio, J. P. Malzac, R. Schwedler, B. Beaumont,
P. Gibart and P. Perlin,
Raman and micro-Raman spectroscopy of GaN layers deposited on
sapphire, Int. Conf. SiC Rel. Mat., Kyoto, Japan (1995). To be published.
- 30
-
C. Waschke, R. Schwedler, Y. Dhaibi, H. G. Roskos, H. Kurz and K. Köhler,
Coherent submillimeter wave emission from Bloch oscillations in higher
Wannier-Stark ladders of a semiconductor superlattice, in: Proc. European
Quantum Electronics Conference (1994), To be published.
- 31
-
R. Schwedler, F. Brüggemann, K. Wolter, C. Jaekel, R. Kersting, A. Kohl,
K. Leo and H. Kurz, Optical properties of shallow
InGaAs-InGaAs superlattices for optoelectronic
applications, in: Proc. Intl. Conf. InP Rel. Mat., pp. 656-659, Paris
(1993). Sociéte des Electriciens et des Electroniciens, IEEE Lasers and
Electro-Optics Society, and IEEE Electron Devices Society.
- 32
-
R. Schwedler, A. Kohl, C. Jaekel, K. Leo, H. Kurz, S. Juillaguet, J. Camassel
and F. H. Baumann, Analysis of growth-induced interface structure in
InGaAs/InP and InAsP/InP multiple quantum wells, in: Proc. 4th Int. Conf.
on the Formation of Semiconductor Interfaces, edited by B. Lengeler,
H. Lüth, W. Mönch and J. Pollmann, pp. 554-557, Jülich (1994). World
Scientific.
- 33
-
S. Juillaguet, R. Schwedler, F. H. Baumann, J. Camassel, K. Wolter, K. Leo,
B. Gallmann and J. P; Laurenti, Experimental characterization of interface
roughness in strained InGaAs/InP MQWs after a growth interruption
sequence, in: Proc. 5th Intl. Conf. InP Rel. Mat., pp. 301-304, Paris
(1993). Sociéte des Electriciens et des Electroniciens, IEEE Lasers and
Electro-Optics Society, and IEEE Electron Devices Society.
- 34
-
R. Kersting, R. Schwedler, K. Leo and H. Kurz, Ultrafast carrier transport and
capture in InGaAs/InP heterostructures, in: Fourth International Conference
on Indium Phosphide and Related Materials, pp. 565-568, Newport, Rhode
Island, USA (1992). IEEE.
- 35
-
R. Schwedler, H. Mikkelsen, K. Leo, K. Wolter, D. Laschet, J. Hergeth and
H. Kurz, InGaAs/InP multiple quantum well modulators in experiment and
theory, in: 8th workshop on optics in computing, vl. 1, pp. 37-40, Paris
(1992). European Optical Society topical meetings digest series.
- 36
-
F. Reinhardt, R. Schwedler, K. Wolter, D. Grützmacher and H. Kurz, Optical
characterization of monolayer islands and interface effects in InGaAs/InP
multi-quantum well structures, in: Optical Characterization of
Semiconductors, edited by D. B. Kushev, vl. 65 of Key Eng. Mater., pp.
87-91, Aedermannsdorf, Switzerland (1992). Trans Tech Publications.
- 37
-
K. Wolter, R. Schwedler, B. Gallmann, C. Jaekel, M. Stollenwerk, J. Camassel,
J. Laurenti and S. Juillaguet, Optical characterization of strained
InGaAs/InP quantum well structures, in: Proceedings ESSDERC 91, Montreux,
pp. 593-596. Elsevier (1991).
- 38
-
S. Juillaguet, J. P; Laurenti, R. Schwedler, K. Wolter, J. Camassel and
H. Kurz, Quantitative approach of non-stochiometric interfaces following a
growth interruption sequence: application to lattice-matched InGaAs/InP
quantum wells, in: Non-Stoichiometry in Semiconductors, edited by K. J.
Bachmann, H.-L. Hwang and C. Schwab, pp. 155-160, Amsterdam (1992). North
Holland.
- 39
-
R. Schwedler, B. Gallmann, K. Wolter, C. Jaekel, H. Kurz, M. Stollenwerk,
J. Camassel, J. P; Laurenti and S. Juillaguet, Optical characterization of
strained InGaAs/InP quantum well structures, in: Non-Stoichiometry in
Semiconductors, edited by K. J. Bachmann, H.-L. Hwang and C. Schwab, pp.
161-166, Amsterdam (1992). North-Holland.
Other Conference Contributions
- 40a
-
F. Royo, R. Schwedler,
J. Camassel and H. Hardtdegen, All-Optical Modulation in InGaAs/InGaAs
Strained Layer Superlattices, GDR Meeting, Mittelwihr, France (1995),
poster presentation.
- 40
-
F. Brüggemann, R. Schwedler, H. Mikkelsen, K. Köhler and H. Kurz, in: Verh.
DPG, vl. 17 A, Münster (1994). European Physical Society and Deutsche
Physikalische Gesellschaft, Published in summary form only.
- 41
-
R. Schwedler, F. Brüggemann, B. Opitz, F. Grünberg, A. Kohl, S. Brittner,
K. Heime and H. Kurz, Wannier-Stark Effekt in Typ-I/Typ-II
InGaAs/InGaAs Übergittern, in: Verh. DPG, Münster (1994). Published
in summary form only.
- 42
-
F. Brüggemann, R. Schwedler, K. Wolter, C. Jaekel, , A. Kohl, K. Leo and
H. Kurz, Properties of shallow InGaAs/InGaAs
superlattices, in: Verh. DPG, edited by W. Heinicke, vl. 17 A, pp.
1458-1459, Regensburg (1993). European Physical Society and Deutsche
Physikalische Gesellschaft, Published in summary form only.
- 43
-
B. Gallmann, R. Schwedler, K. Wolter, A. Kohl, K. Leo, H. Kurz and F. H.
Baumann, Optische und transmissionselektronenmikroskopische
Charakterisierung gitterfehlangepaster InGaAs/InP Quantentöpfe,
in: Verh. DPG (VI) 27, Regensburg (1992). Published in summary form only.
- 44
-
B. Gallmann, R. Schwedler, K. Wolter, M. Stollenwerk, D. Grützmacher and
H. Kurz, Optische Charakterisierung gitterfehlangepaßter
InGaAs/InP Quantentröge, in: Verh. DPG (VI) 26, pp.
1125-1126, Regensburg (1992). published in summary form only.
- 45
-
R. Schwedler, B. Gallmann, W. Rosbruch, K. Wolter, M. Stollenwerk,
D. Grützmacher and H. Kurz, Charakterisierung von InGaAs/InGaAsP
Quantum Well Strukturen für optoelektronische Anwendungen, in:
Verh. DPG (VI) 26, p. 1152, Münster (1991). Published in summary form only.
- 46
-
R. Schwedler, F. Brüggemann, K. Wolter, C. Jaekel, R. Kersting, A. Kohl,
K. Leo and H. Kurz, Properties of mixed type-I/type-II shallow
InGaAs/InGaAs superlattices EW-MOVPE 93,
Malmö, Sweden.
- 47
-
B. Gallmann, R. Schwedler, K. Wolter, D. Grützmacher, M. Stollenwerk and
H. Kurz, Optical characterization of strained InGaAs/InP quantum wells,
EW-MOVPE IV, Nijmegen (1991).
Technical Reports
- 48
-
R. Schwedler, F. Brüggemann, C. Jaekel and A. Kohl, InAsP/InP
heterostructures: Quantitative comparison of mass spectrometry and
photoluminescence characterization, Tech. rep., Institut für
Halbleitertechnik, RWTH Aachen, pp. 112-113 (1993).
- 49
-
R. Schwedler, F. Brüggemann, Y. Dhaibi and H. Mikkelsen, Electronic states
and optical transitions in shallow InGaAs/InGaAs superlattices, Tech.
rep., Institut für Halbleitertechnik, RWTH Aachen, pp. 96-97 (1993).
- 50
-
R. Schwedler, U. Emmerichs, F. Wolter and A. Kohl, Room temperature
characterization of InAsP/InP MQWs by resonant second harmonic
generation, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp.
48-49 (1993).
- 51
-
C. Waschke, H. Roskos, R. Schwedler, K. Leo and K. Köhler, Bloch oszillations
from a semiconductor superlattice, Tech. rep., Institut für
Halbleitertechnik, RWTH Aachen, pp. II.56-II.57 (1992).
- 52
-
S. Brittner, A. Kohl, F. E. G. Guimaraes, R. Schwedler and C. Jaekel,
As-carry-over in InAsP MQWs, Tech. rep., Institut für
Halbleitertechnik, RWTH Aachen, pp. I.50-I.51 (1992).
- 53
-
F. Brüggemann, R. Schwedler, K. Leo and K. Köhler, Wannier-stark-effect
in an AlGaAs/GaAs superlattice, Tech. rep., Institut für
Halbleitertechnik, RWTH Aachen, pp. II.32-II.33 (1992).
- 54
-
R. Schwedler, F. Brüggemann, K. Wolter, C. Jaekel, A. Kohl and K. Leo,
Optical properties of shallow InGaAs/InGaAs
superlattices, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp.
II.34-II.35 (1992).
- 55
-
M. Stollenwerk, R. Müller, D. Grützmacher, R. Schwedler and B. Gallmann,
Influence of growth interruption on strained GaAs/InP MQWs, Tech. rep.,
Institut für Halbleitertechnik, RWTH Aachen, pp. I.42-I.43 (1991).
- 56
-
M. Stollenwerk, R. Müller, D. Grützmacher, R. Schwedler, B. Gallmann,
A. Kux and R. Meyer, Optical absorption measurements on In-rich
GaInAs/InP MQWs, Tech. rep., Institut für Halbleitertechnik, RWTH
Aachen, pp. I.44-I.45 (1991).
- 57
-
B. Gallmann, R. Schwedler, K. Wolter, D. Grützmacher, M. Stollenwerk and
H. Kurz, Optical characterization of strained InGaAs/InP quantum wells,
Tech. rep., Institut für Halbleitertechnik, RWTH Aachen (1990).
- 58
-
B. Gallmann, R. Schwedler, K. Wolter and M. Stollenwerk, Temperature resolved
photoluminescence of strained InGaAs/InP heterostructures, Tech. rep.,
Institut für Halbleitertechnik, RWTH Aachen, pp. II.30-II.31 (1991).
- 59
-
B. Gallmann, R. Schwedler, A. Kohl and K. Wolter, Photoluminescence excitation
spectroscopy of strained InGaAs/InP quantum wells, Tech. rep., Institut
für Halbleitertechnik, RWTH Aachen, pp. II.32-II.33 (1991).
- 60
-
B. Gallmann, R. Schwedler, A. Kohl and K. Wolter, Low-temperature photocurrent
spectroscopy of strained InGaAs/InP heterostructures, Tech. rep.,
Institut für Halbleitertechnik, RWTH Aachen, pp. II.34-II.35 (1991).
- 61
-
R. Kersting, R. Schwedler, A. Kohl and K. Leo, Ultrafast carrier transfer in
strained InGaAs/InP multiple quantum wells, Tech. rep., Institut für
Halbleitertechnik, RWTH Aachen, pp. II.46-II.47 (1991).
- 62
-
H. Mikkelsen, R. Schwedler, D. Laschet and J. Hergeth, Theoretical and
experimental investigation of InGaAs/InP PIN diodes, Tech. rep.,
Institut für Halbleitertechnik, RWTH Aachen, pp. II.38-II.39 (1991).
- 63
-
R. Schwedler, B. Gallmann, A. Kohl, K. Wolter, S. Juillaguet, J. Camassel and
J. P; Laurenti, Model of confined states in strained InGaAs/InP
heterostructures, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen,
pp. II.26-II.27 (1991).
- 64
-
R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo and F. H. Baumann,
Optical and transmission electron microscope characterization of strained
InGaAs/InP quantum wells, Tech. rep., Institut für Halbleitertechnik,
RWTH Aachen, pp. II.28-II.29 (1991).
- 65
-
R. Schwedler, R. Kersting and K. Wolter, Room temperature luminescence from an
InGaAs/InP MQW in an electric field, Tech. rep., Institut für
Halbleitertechnik, RWTH Aachen, pp. II.36-II.37 (1991).
- 66
-
K. Wolter, R. Schwedler, F. Reinhard and D. Grützmacher, Optical gain
spectroscopy of InGaAs/InP and InGaAs/InGaAsP MQW separate
confinement structures, Tech. rep., Institut für Halbleitertechnik, RWTH
Aachen, pp. II.15-II.16 (1990).
- 67
-
R. Schwedler, B. Gallmann, K. Wolter, M. Glade and D. Grützmacher, Room
temperature electrotransmission spectroscopy of InGaAs/InP MQW p-i-n
diodes, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp.
II.17-II.18 (1990).
- 68
-
R. Schwedler, K. Wolter and D. Grützmacher, Characterization of
InGaAs/InP MQW structures by absorption and photocurrent spectroscopy,
Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.23-II.24
(1990).
- 69
-
F. Reinhardt, K. Wolter, D. Grützmacher, J. Hergeth, R. Schwedler and
H. Kurz, Optical gain spectroscopy, Tech. rep., Institut für
Halbleitertechnik, RWTH Aachen, pp. 158-159 (1989).
- 70
-
F. Reinhardt, R. Schwedler, K. Wolter, D. Grützmacher and H. Kurz,
Temperature resolved PL investigations on InGaAs/InP MQWs, Tech.
rep., Institut für Halbleitertechnik, RWTH Aachen, pp. 162-163 (1989).
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