List of Publications

Due to the usual copyright restrictions I'm not allowed to offer these publications on the web. If you are interested in some of them, please send me an email, and I'll send you reprints. The annual reports of the Institute of Semiconductor Electronics in Aachen should be requested there.

Some of my co-authors can be reached by email; I've added the appropiate hyperlinks.

I did not try to include graphics for all the math symbols in the titles of my papers, nor did I know about HTML3 when I started this one. If you wonder what InGaAs/InGaAs might be, you should simply request a reprint.

The status of my actual paper

Shallow strained InGaAs/InGaAs superlattices embedded in p-i-n diodes: Structural properties and optical response
can be requested at the Pysical Review B editorial office. (Should be out soon, reviewers comments were positive)

Contents of this page

  • Dissertation
  • Review Papers
  • Regular Papers
  • Reviewed Conference Papers
  • Other Conference Contributions
  • Technical Reports

    • Dissertation

    1
    R. Schwedler, Grundlagen und Charakterisierung von Wannier--Stark Modulatoren, PhD Thesis, RWTH, Faculty for Electronic Engineering, Aachen (1995), Verlag Shaker, Aachen.

    Review Papers

    2
    R. Schwedler, H. Mikkelsen, K. Wolter, D. Laschet, J. Hergeth and H. Kurz, InGaAs/InP multiple quantum well modulators in experiment and theory, J. de Physique III France 4, 2341 (1994).

    3
    R. Kersting, R. Schwedler, A. Kohl, K. Leo and H. Kurz, Ultrafast carrier dynamics in InGaAs/InP heterostructures, Optical and Quantum Electronics, Special Issue on Carrier Transport in Quantum Well Lasers 26, S705 (1994).

    Regular Papers

    4
    F. Royo, R. Schwedler, J. Camassel, R. Meyer, H. Hardtdegen, B. Fraisse, Shallow Strained InGaAs/InGaAs Superlattices Embedded in PIN Diodes: Structural Properties and Optical Response, Phys. Rev. B, submitted.

    4a
    R. Schwedler, A. Ziebell, F. Brüggemann, B. Opitz, A. Kohl, H. Kurz, Band structure and electro-optical properties of mixed type-I/type-II InGaAs/InGaAs superlattices, Phys. Rev. B 52 (16), 12108 (1995).

    5
    R. Schwedler, F. Brüggemann, C. Jaekel, A. Kohl, S. Brittner and H. Kurz, Quantitative comparison of mass spectrometry and photoluminescence on InAsP/InP multiple quantum well structures, Mat. Sci. Eng. B 28(1-3), 319 (1994).

    6
    R. Schwedler, F. Brüggemann, A. Ziebell, B. Opitz, A. Kohl and H. Kurz, Valence band structure of fractional Wannier-Stark-Effect shallow InGaAs/InGaAs superlattices, Superlattices Microstructures 15(2), 145 (1994).

    7
    T. Dekorsy, P. Leisching, W. Beck, Y. Dhaibi, R. Schwedler, K. Köhler, H. G. Roskos and H. Kurz, Internal field dynamics of coherent Bloch oscillations in superlattices, Superlattices Microstructures 15(1), 11 (1994).

    8
    P. Leisching, P. Haring Bolivar, R. Schwedler, K. Leo, H. Kurz, K. Köhler and P. Ganser, Investigation of Bloch oscillations in a GaAs/AlGaAs superlattice by spectrally resolved four-wave mixing, Semicond. Sci. Technol. 9, 419 (1994).

    9
    H. G. Roskos, C. Waschke, R. Schwedler, P. Leisching, Y. Dhaibi, H. Kurz and K. Köhler, Bloch oscillations in GaAs/AlGaAs superlattices after excitation well above the bandgap, Superlattices Microstructures 15(3), 281 (1994).

    10
    F. Royo, R. Meyer, B. Fraisse, R. Schwedler, H. Hardtdegen and J. Camassel, Structural investigations of InGaAs/InGaAs SLSs for optoelectronic device applications, Superlattices Microstructures 15(2), 187 (1994).

    11
    C. Waschke, P. Leisching, P. Haring Bolivar, R. Schwedler, F. Brüggemann, H. G. Roskos, K. Leo, H. Kurz and K. Köhler, Detection of Bloch oscillations in a semiconductor superlattice by time-resolved terahertz spectroscopy and degenerate four-wave mixing, Solid-State Electronics 37(4-6), 1321 (1994).

    12
    R. Schwedler, F. Brüggemann, A. Kohl, K. Wolter, K. Leo and H. Kurz, Type-I and type-II Wannier-Stark effect in InGaAs/InGaAs superlattices, Appl. Phys. A 57(2), 199 (1993).

    13
    R. Schwedler, F. Brüggemann, B. Opitz, A. Kohl, K. Wolter, K. Leo and H. Kurz, Observation of type-I and type-II Wannier-Stark effect in InGaAs/InGaAs superlattices, J. Physique IV 3(5), 445 (1993).

    14
    C. Waschke, H. G. Roskos, R. Schwedler, K. Leo, H. Kurz and K. Köhler, Coherent submillimeter-wave emission from Bloch oszillations in a semiconductor superlattice, Phys. Rev. Lett. 70(21), 3319 (1993).

    15
    P. Leisching, P. Haring Bolivar, W. Beck, Y. Dhaibi, F. Brüggemann, R. Schwedler, H. Kurz, K. Leo and K. Köhler, Bloch oscillations of excitonic wave-packets in semiconductor superlattices, Phys. Rev. B 50(10), 14389 (1994).

    16
    J. Camassel, S. Juillaguet, R. Schwedler, K. Wolter, F. H. Baumann, K. Leo and J. P; Laurenti, Morphology of InGaAs/InP QWs: from exciton spectroscopy to HR-TEM analyses, J. Physique IV 3(5), 99 (1993).

    17
    A. Kohl, S. Juillaguet, B. Fraisse, R. Schwedler, F. Royo, H. Peyre, F. Brüggemann, K. Wolter, K. Leo, H. Kurz and J. Camassel, Growth and characterization of InGaAs/InGaAs strained-layer superlattices, Mat. Sci. Eng. B 21(2-3), 244 (1993).

    18
    J. Camassel, K. Wolter, S. Juillaguet, R. Schwedler, E. Massone, B. Gallmann and J. P; Laurenti, Evidence for nonuniform interface thickness in strained GaInAs/InP quantum wells, Mat. Sci. Eng. B 20, 62 (1993).

    19
    K. Leo, P. H. Bolivar, F. Brüggemann, R. Schwedler and K. Köhler, Observation of Bloch oszillations in a semiconductor superlattice, Solid State Comm. 84(10), 943 (1992).

    20
    R. Kersting, R. Schwedler, K. Wolter, K. Leo and H. Kurz, Dynamics of carrier transport and capture in InGaAs/InP heterostructures, Phys.\ Rev. B 46(3), 1639 (1992).

    21
    R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz and F. H. Baumann, Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE, Mat. Sci. Eng. B 20, 66 (1993).

    22
    R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet, J. Camassel, J. P. Laurenti and F. H. Baumann, Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE, Microelectronic Engineering 19, 891 (1992).

    23
    R. Schwedler, H. Mikkelsen, R. Kersting, D. Laschet, A. Kohl, K. Wolter, K. Leo and H.Kurz, Electro-optic characterization of InGaAs/InP MQW p-i-n modulator structures, Microelectronic Engineering 19, 895 (1992).

    24
    R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet, E. Massone, J. Camassel, J. P; Laurenti and F. H. Baumann, Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence, Appl. Surf. Sci. 63, 187 (1993).

    25
    R. Schwedler, F. Reinhardt, D. Grützmacher and K. Wolter, Temperature resolved photoluminescence investigations on InGaAs/InP MQW's, J. Crys. Growth 107(1-4), 531 (1991).

    26
    R. Schwedler, K. Wolter, B. Gallmann, D. Grützmacher, M. Stollenwerk and H. Kurz, Optical characterization of indium-rich strained InGaAs/InP single- and multiple-quantum well structures, Mat. Sci. Eng. B 9(1-3), 297 (1991).

    Reviewed Conference Papers

    27a
    R. Schwedler, J.~Allègre, J. Camassel and I.~Grzegory, Time resolved spectroscopy of the yellow luminescence band in GaN bulk single crystals, Proc.~ICPS XXIII, submitted.
    27
    F. Royo, J. Camassel, R. Schwedler, B. Fraisse and A. D. Smith, Optical properties of high quality strain-compensated InGaAs/InGaAs superlattices grown on InP, in: Semiconductor Heteroepitaxy - Growth, Characterization and Device Applications, pp. 502-505, edited by B. Gil and R.-L. Aulombard, World Scientific (1995).

    28
    J. Camassel, T. Talercio, J. P. Malzac, R. Schwedler, B. Beaumont, P. Gibart and P. Perlin, Raman and micro-Raman spectroscopy of GaN layers deposited on sapphire, Int. Conf. SiC Rel. Mat., Kyoto, Japan (1995). To be published.

    30
    C. Waschke, R. Schwedler, Y. Dhaibi, H. G. Roskos, H. Kurz and K. Köhler, Coherent submillimeter wave emission from Bloch oscillations in higher Wannier-Stark ladders of a semiconductor superlattice, in: Proc. European Quantum Electronics Conference (1994), To be published.

    31
    R. Schwedler, F. Brüggemann, K. Wolter, C. Jaekel, R. Kersting, A. Kohl, K. Leo and H. Kurz, Optical properties of shallow InGaAs-InGaAs superlattices for optoelectronic applications, in: Proc. Intl. Conf. InP Rel. Mat., pp. 656-659, Paris (1993). Sociéte des Electriciens et des Electroniciens, IEEE Lasers and Electro-Optics Society, and IEEE Electron Devices Society.

    32
    R. Schwedler, A. Kohl, C. Jaekel, K. Leo, H. Kurz, S. Juillaguet, J. Camassel and F. H. Baumann, Analysis of growth-induced interface structure in InGaAs/InP and InAsP/InP multiple quantum wells, in: Proc. 4th Int. Conf. on the Formation of Semiconductor Interfaces, edited by B. Lengeler, H. Lüth, W. Mönch and J. Pollmann, pp. 554-557, Jülich (1994). World Scientific.

    33
    S. Juillaguet, R. Schwedler, F. H. Baumann, J. Camassel, K. Wolter, K. Leo, B. Gallmann and J. P; Laurenti, Experimental characterization of interface roughness in strained InGaAs/InP MQWs after a growth interruption sequence, in: Proc. 5th Intl. Conf. InP Rel. Mat., pp. 301-304, Paris (1993). Sociéte des Electriciens et des Electroniciens, IEEE Lasers and Electro-Optics Society, and IEEE Electron Devices Society.

    34
    R. Kersting, R. Schwedler, K. Leo and H. Kurz, Ultrafast carrier transport and capture in InGaAs/InP heterostructures, in: Fourth International Conference on Indium Phosphide and Related Materials, pp. 565-568, Newport, Rhode Island, USA (1992). IEEE.

    35
    R. Schwedler, H. Mikkelsen, K. Leo, K. Wolter, D. Laschet, J. Hergeth and H. Kurz, InGaAs/InP multiple quantum well modulators in experiment and theory, in: 8th workshop on optics in computing, vl. 1, pp. 37-40, Paris (1992). European Optical Society topical meetings digest series.

    36
    F. Reinhardt, R. Schwedler, K. Wolter, D. Grützmacher and H. Kurz, Optical characterization of monolayer islands and interface effects in InGaAs/InP multi-quantum well structures, in: Optical Characterization of Semiconductors, edited by D. B. Kushev, vl. 65 of Key Eng. Mater., pp. 87-91, Aedermannsdorf, Switzerland (1992). Trans Tech Publications.

    37
    K. Wolter, R. Schwedler, B. Gallmann, C. Jaekel, M. Stollenwerk, J. Camassel, J. Laurenti and S. Juillaguet, Optical characterization of strained InGaAs/InP quantum well structures, in: Proceedings ESSDERC 91, Montreux, pp. 593-596. Elsevier (1991).

    38
    S. Juillaguet, J. P; Laurenti, R. Schwedler, K. Wolter, J. Camassel and H. Kurz, Quantitative approach of non-stochiometric interfaces following a growth interruption sequence: application to lattice-matched InGaAs/InP quantum wells, in: Non-Stoichiometry in Semiconductors, edited by K. J. Bachmann, H.-L. Hwang and C. Schwab, pp. 155-160, Amsterdam (1992). North Holland.

    39
    R. Schwedler, B. Gallmann, K. Wolter, C. Jaekel, H. Kurz, M. Stollenwerk, J. Camassel, J. P; Laurenti and S. Juillaguet, Optical characterization of strained InGaAs/InP quantum well structures, in: Non-Stoichiometry in Semiconductors, edited by K. J. Bachmann, H.-L. Hwang and C. Schwab, pp. 161-166, Amsterdam (1992). North-Holland.

    Other Conference Contributions

    40a
    F. Royo, R. Schwedler, J. Camassel and H. Hardtdegen, All-Optical Modulation in InGaAs/InGaAs Strained Layer Superlattices, GDR Meeting, Mittelwihr, France (1995), poster presentation.

    40
    F. Brüggemann, R. Schwedler, H. Mikkelsen, K. Köhler and H. Kurz, in: Verh. DPG, vl. 17 A, Münster (1994). European Physical Society and Deutsche Physikalische Gesellschaft, Published in summary form only.

    41
    R. Schwedler, F. Brüggemann, B. Opitz, F. Grünberg, A. Kohl, S. Brittner, K. Heime and H. Kurz, Wannier-Stark Effekt in Typ-I/Typ-II InGaAs/InGaAs Übergittern, in: Verh. DPG, Münster (1994). Published in summary form only.

    42
    F. Brüggemann, R. Schwedler, K. Wolter, C. Jaekel, , A. Kohl, K. Leo and H. Kurz, Properties of shallow InGaAs/InGaAs superlattices, in: Verh. DPG, edited by W. Heinicke, vl. 17 A, pp. 1458-1459, Regensburg (1993). European Physical Society and Deutsche Physikalische Gesellschaft, Published in summary form only.

    43
    B. Gallmann, R. Schwedler, K. Wolter, A. Kohl, K. Leo, H. Kurz and F. H. Baumann, Optische und transmissionselektronenmikroskopische Charakterisierung gitterfehlangepaster InGaAs/InP Quantentöpfe, in: Verh. DPG (VI) 27, Regensburg (1992). Published in summary form only.

    44
    B. Gallmann, R. Schwedler, K. Wolter, M. Stollenwerk, D. Grützmacher and H. Kurz, Optische Charakterisierung gitterfehlangepaßter InGaAs/InP Quantentröge, in: Verh. DPG (VI) 26, pp. 1125-1126, Regensburg (1992). published in summary form only.

    45
    R. Schwedler, B. Gallmann, W. Rosbruch, K. Wolter, M. Stollenwerk, D. Grützmacher and H. Kurz, Charakterisierung von InGaAs/InGaAsP Quantum Well Strukturen für optoelektronische Anwendungen, in: Verh. DPG (VI) 26, p. 1152, Münster (1991). Published in summary form only.

    46
    R. Schwedler, F. Brüggemann, K. Wolter, C. Jaekel, R. Kersting, A. Kohl, K. Leo and H. Kurz, Properties of mixed type-I/type-II shallow InGaAs/InGaAs superlattices EW-MOVPE 93, Malmö, Sweden.

    47
    B. Gallmann, R. Schwedler, K. Wolter, D. Grützmacher, M. Stollenwerk and H. Kurz, Optical characterization of strained InGaAs/InP quantum wells, EW-MOVPE IV, Nijmegen (1991).

    Technical Reports

    48
    R. Schwedler, F. Brüggemann, C. Jaekel and A. Kohl, InAsP/InP heterostructures: Quantitative comparison of mass spectrometry and photoluminescence characterization, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. 112-113 (1993).

    49
    R. Schwedler, F. Brüggemann, Y. Dhaibi and H. Mikkelsen, Electronic states and optical transitions in shallow InGaAs/InGaAs superlattices, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. 96-97 (1993).

    50
    R. Schwedler, U. Emmerichs, F. Wolter and A. Kohl, Room temperature characterization of InAsP/InP MQWs by resonant second harmonic generation, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. 48-49 (1993).

    51
    C. Waschke, H. Roskos, R. Schwedler, K. Leo and K. Köhler, Bloch oszillations from a semiconductor superlattice, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.56-II.57 (1992).

    52
    S. Brittner, A. Kohl, F. E. G. Guimaraes, R. Schwedler and C. Jaekel, As-carry-over in InAsP MQWs, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. I.50-I.51 (1992).

    53
    F. Brüggemann, R. Schwedler, K. Leo and K. Köhler, Wannier-stark-effect in an AlGaAs/GaAs superlattice, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.32-II.33 (1992).

    54
    R. Schwedler, F. Brüggemann, K. Wolter, C. Jaekel, A. Kohl and K. Leo, Optical properties of shallow InGaAs/InGaAs superlattices, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.34-II.35 (1992).

    55
    M. Stollenwerk, R. Müller, D. Grützmacher, R. Schwedler and B. Gallmann, Influence of growth interruption on strained GaAs/InP MQWs, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. I.42-I.43 (1991).

    56
    M. Stollenwerk, R. Müller, D. Grützmacher, R. Schwedler, B. Gallmann, A. Kux and R. Meyer, Optical absorption measurements on In-rich GaInAs/InP MQWs, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. I.44-I.45 (1991).

    57
    B. Gallmann, R. Schwedler, K. Wolter, D. Grützmacher, M. Stollenwerk and H. Kurz, Optical characterization of strained InGaAs/InP quantum wells, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen (1990).

    58
    B. Gallmann, R. Schwedler, K. Wolter and M. Stollenwerk, Temperature resolved photoluminescence of strained InGaAs/InP heterostructures, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.30-II.31 (1991).

    59
    B. Gallmann, R. Schwedler, A. Kohl and K. Wolter, Photoluminescence excitation spectroscopy of strained InGaAs/InP quantum wells, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.32-II.33 (1991).

    60
    B. Gallmann, R. Schwedler, A. Kohl and K. Wolter, Low-temperature photocurrent spectroscopy of strained InGaAs/InP heterostructures, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.34-II.35 (1991).

    61
    R. Kersting, R. Schwedler, A. Kohl and K. Leo, Ultrafast carrier transfer in strained InGaAs/InP multiple quantum wells, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.46-II.47 (1991).

    62
    H. Mikkelsen, R. Schwedler, D. Laschet and J. Hergeth, Theoretical and experimental investigation of InGaAs/InP PIN diodes, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.38-II.39 (1991).

    63
    R. Schwedler, B. Gallmann, A. Kohl, K. Wolter, S. Juillaguet, J. Camassel and J. P; Laurenti, Model of confined states in strained InGaAs/InP heterostructures, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.26-II.27 (1991).

    64
    R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo and F. H. Baumann, Optical and transmission electron microscope characterization of strained InGaAs/InP quantum wells, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.28-II.29 (1991).

    65
    R. Schwedler, R. Kersting and K. Wolter, Room temperature luminescence from an InGaAs/InP MQW in an electric field, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.36-II.37 (1991).

    66
    K. Wolter, R. Schwedler, F. Reinhard and D. Grützmacher, Optical gain spectroscopy of InGaAs/InP and InGaAs/InGaAsP MQW separate confinement structures, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.15-II.16 (1990).

    67
    R. Schwedler, B. Gallmann, K. Wolter, M. Glade and D. Grützmacher, Room temperature electrotransmission spectroscopy of InGaAs/InP MQW p-i-n diodes, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.17-II.18 (1990).

    68
    R. Schwedler, K. Wolter and D. Grützmacher, Characterization of InGaAs/InP MQW structures by absorption and photocurrent spectroscopy, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. II.23-II.24 (1990).

    69
    F. Reinhardt, K. Wolter, D. Grützmacher, J. Hergeth, R. Schwedler and H. Kurz, Optical gain spectroscopy, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. 158-159 (1989).

    70
    F. Reinhardt, R. Schwedler, K. Wolter, D. Grützmacher and H. Kurz, Temperature resolved PL investigations on InGaAs/InP MQWs, Tech. rep., Institut für Halbleitertechnik, RWTH Aachen, pp. 162-163 (1989).

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