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R. Schwedler, B. Gallmann, A. Kohl, K. Wolter, S. Juillaguet, J. Camassel, and J. P. Laurenti. Model of confined states in strained InGaAs/InP heterostructures. Technical report, Institut für Halbleitertechnik, RWTH Aachen, 1991.

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R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, and F. H. Baumann. Optical and transmission electron microscope characterization of strained InGaAs/InP quantum wells. Technical report, Institut für Halbleitertechnik, RWTH Aachen, 1991.

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R. Schwedler, F. Reinhardt, D. Grützmacher, and K. Wolter. Temperature resolved photoluminescence investigations on InGaAs/InP MQW's. J. Crys. Growth, 107(1-4):531-536, 1991.

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R. Schwedler, K. Wolter, B. Gallmann, D. Grützmacher, M. Stollenwerk, and H. Kurz. Optical characterization of indium-rich strained InGaAs/InP single-- and multiple-quantum well structures. Mat. Sci. Eng. B, 9(1-3):297-300, 1991.

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R. Schwedler, F. Brüggemann, K. Wolter, Ch. Jaekel, A. Kohl, and K. Leo. Optical properties of shallow In_1-xGa_xAs/In_1-yGa_yAs superlattices. Technical report, Institut für Halbleitertechnik, RWTH Aachen, 1992.

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R. Schwedler, H. Mikkelsen, R. Kersting, D. Laschet, A. Kohl, K. Wolter, K. Leo, and H.Kurz. Electro-optic characterization of InGaAs/InP MQW p-i-n modulator structures. Microelectronic Engineering, 19:895-898, 1992.

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R. Schwedler, H. Mikkelsen, K. Leo, K. Wolter, D. Laschet, J. Hergeth, and H. Kurz. InGaAs/InP multiple quantum well modulators in experiment and theory. In 8th workshop on optics in computing, volume 1, pages 37-40, Paris, 1992. European Optical Society topical meetings digest series.

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R. Schwedler, F. Brüggemann, Y. Dhaibi, and H. Mikkelsen. Electronic states and optical transitions in shallow InGaAs/InGaAs superlattices. Technical report, Institut für Halbleitertechnik, RWTH Aachen, 1993.

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R. Schwedler, F. Brüggemann, Ch. Jaekel, and A. Kohl. InAsP/InP heterostructures: Quantitative comparison of mass spectrometry and photoluminescence characterization. Technical report, Institut für Halbleitertechnik, RWTH Aachen, 1993.

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R. Schwedler, F. Brüggemann, A. Kohl, K. Wolter, K. Leo, and H. Kurz. Type--I and type--II Wannier-Stark effect in InGaAs/InGaAs superlattices. Appl. Phys. A, 57(2):199-201, 1993.

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R. Schwedler, F. Brüggemann, B. Opitz, A. Kohl, K. Wolter, K. Leo, and H. Kurz. Observation of type--I and type--II Wannier-Stark effect in InGaAs/InGaAs superlattices. J. Physique IV, 3(5):445-448, 1993.

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R. Schwedler, F. Brüggemann, K. Wolter, Ch. Jaekel, R. Kersting, A. Kohl, K. Leo, and H. Kurz. Optical properties of shallow In_1-xGa_xAs-In_1-yGa_yAs superlattices for optoelectronic applications. In Proc. Intl. Conf. InP Rel. Mat., pages 656-659, Paris, 1993. Sociéte des Electriciens et des Electroniciens, IEEE Lasers and Electro-Optics Society, and IEEE Electron Devices Society.

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R. Schwedler, F. Brüggemann, K. Wolter, Ch. Jaekel, R. Kersting, A. Kohl, K. Leo, and H. Kurz. Properties of mixed type--I/type--II shallow In_1-xGa_xAs/In_0.53Ga_0.47As superlattices. 1993. EW-MOVPE 93, Malmö, Sweden.

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R. Schwedler, U. Emmerichs, F. Wolter, and A. Kohl. Room temperature characterization of InAsP/InP MQWs by resonant second harmonic generation. Technical report, Institut für Halbleitertechnik, RWTH Aachen, 1993.

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R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, and F. H. Baumann. Interface properties of strained InGaAs/InP quantum wells grown by LP-MOVPE. Mat. Sci. Eng. B, 20:66-68, 1993.

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R. Schwedler, B. Gallmann, K. Wolter, A. Kohl, K. Leo, H. Kurz, S. Juillaguet, E. Massone, J. Camassel, J. P. Laurenti, and F. H. Baumann. Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence. Appl. Surf. Sci., 63:187-190, 1993.

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R. Schwedler, F. Brüggemann, Ch. Jaekel, A. Kohl, S. Brittner, and H. Kurz. Quantitative comparison of mass spectrometry and photoluminescence on InAsP/InP multiple quantum well structures. Mat. Sci. Eng. B, 28(1-3):319-322, 1994.

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R. Schwedler, F. Brüggemann, B. Opitz, F. Grünberg, A. Kohl, S. Brittner, K. Heime, and H. Kurz. Wannier--Stark Effekt in Typ--I/Typ--II InGaAs/InGaAs übergittern. In Verh. DPG, Münster, 1994. Published in summary form only.

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R. Schwedler, F. Brüggemann, A. Ziebell, B. Opitz, A. Kohl, and H. Kurz. Valence band structure of fractional Wannier-Stark-Effect shallow InGaAs/InGaAs superlattices. Superlattices Microstructures, 15(2):145-149, 1994.

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R. Schwedler, A. Kohl, Ch. Jaekel, K. Leo, H. Kurz, S. Juillaguet, J. Camassel, and F. H. Baumann. Analysis of growth-induced interface structure in InGaAs/InP and InAsP/InP multiple quantum wells. In B. Lengeler, H. Lüth, W. Mönch, and J. Pollmann, editors, Proc. 4th Int. Conf. on the Formation of Semiconductor Interfaces, pages 554-557, Jülich, 1994. World Scientific.

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R. Schwedler, H. Mikkelsen, K. Wolter, D. Laschet, J. Hergeth, and H. Kurz. InGaAs/InP multiple quantum well modulators in experiment and theory. J. de Physique III France, 4:2341-2359, 1994. Review paper (invited).

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R. Schwedler, A. Ziebell, F. Brüggemann, B. Opitz, A. Kohl, and H. Kurz. Band structure and electro-optical properties of mixed type--I/type--II InGaAs/InGaAs superlattices. Phys. Rev. B, 52(16):12108, 1995.

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