Large Bandgap Semiconductors

[1]

I. Akasaki and H. Amano. Crystal growth of column III nitrides and their applications to short wavelength light emitters. J. Cryst. Growth, 146:455-461, 1995.

[2]

I. Akasaki, H. Amano, H. Murakami, M. Sassa, H. Kato, and K. Manabe. Growth of GaN and AlGaN for UV/blue p-n junction diodes. J. Cryst. Growth, 128:379-383, 1993.

[3]

I. Akasaki, editor. Topical Workshop on III-V Nitrides (Abstracts), Nagoya, Japan, 1995. IEEE.

[4]

J. Camassel, S. Contreras, T. Taliercio, J. M. Bluet, W. Knap, and P. Perlin. Proprietes de transport, sprectrometrie Raman et spctroscopie infrarouge de GaN et de GaN/saphir. Technical report, G.E.S.-UM2 Montpellier, 1995.

[5]

J. Camassel, T. Talercio, J. P. Malzac, R. Schwedler, B. Beaumont, and P. Gibart. Raman and micro-Raman spectroscopy of GaN layers deposited on sapphire. In 6th Intl. Conf. SiC Rel. Mat. [6]. to be published.

[6]

J. Camassel, T. Talercio, J. P. Malzac, R. Schwedler, B. Beaumont, and P. Gibart. Raman and micro-Raman spectroscopy of GaN layers deposited on sapphire. In 6th Intl. Conf. SiC Rel. Mat., Kyoto, Japan, 1995. to be published.

[7]

T. Detchprohm, H. Amano, K. Hiramatsu, and I. Akasaki. The growth of thick GaN film on sapphire substrate by using ZnO buffer layer. J. Cryst. Growth, 128:384-390, 1993.

[8]

J. Edmond, H.-S. Kong, M. Leonard, V. Dmitriev, K. Irvine, and G. Bulman. Gan:sic-based blue leds. In Akasaki [3], pages A-3.

[9]

I. Grzegory and S. Krukowski. Physica Scripta, T39:242, 1991.

[10]

O. Kordina, J. P. Bergman, A. Henry, E. Janzen, S. Savage, J. Andre, L. P. Ramberg, U. Lindefelt, W. Hermansson, and K. Bergman. A 4.5 kV 6H silicon carbide rectifier. Appl. Phys. Lett.. submitted.

[11]

S. krishnankutty, I. K. Shmagin, R. M. Kolbas, C. Yuan, T. Salagaj, A. Gurary, R. A. Stall, M. Schurman, C. Y. Hwang, Y. Li, W. E. Mayo, Y. Lu, and J. M. Zavada. Investigation of the photoluminescence characteristics of mg:gan and zn:ingan. In Akasaki [3], pages P-25.

[12]

K. Kubota, Y. Kobayashi, and K. Fujimoto. Preparation and properties of III-V nitride thin films. J. Appl. Phys., 66(7):2984-2988, 1989.

[13]

N. Kuwano, T. Shiraishi, A. Koga, K. Oki, K. Hiramatsu, H. Amano, K. Itoh, and I. Akasaki. Cross-sectional TEM study of microstructures in MOVPE GaN films grown on alpha-Al_2O_3 with a buffer layer of AlN. J. Cryst. Growth, 115:381-387, 1991.

[14]

M. E. Lin, B. N. Sverdlov, and c H. Morko. Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy. J. Appl. Phys., 74(8):5038-5041, 1993.

[15]

M. E. Lin, B. N. Sverdlov, and c H. Morko. Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy. Appl. Phys. Lett., 63(26):3625-3627, 1993.

[16]

W. J. Meng and T. A. Perry. Strain effects in epitaxial GaN grown on AlN--buffered Si(111). J. Appl. Phys., 76(12):7824-7828, 1994.

[17]

K. Miwa and A. Fukumoto. First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitride. Phys. Rev. B, 48(11):7897-7902, 1993.

[18]

S. Miyoshi and K. Onabe. Semi-empirical tight-binding calculation of the electronic structure of gap_1-xn_x (x = 0.25, 0.5, 0.75) alloys. In Akasaki [3], pages P-1.

[19]

S. Miyoshi, K. Onabe, N. Ohkouchi, H. Yaguchi, R. Ito, S. Fukatsu, and Y. Shiraki. MOVPE growth of cubic GaN on GaAs using dimethylhydrazine. J. Cryst. Growth, 124:439-442, 1992.

[20]

B. Monemar, J. P. Bergman, T. Lundström, C. I. Harris, H. amano, and I. Akasaki. Optical characterization of gan and related materials. In Akasaki [3], pages F-1.

[21]

M. Mori, M. Yoshizawa, N. Fujita, A. Kikuchi, and K. Kishino. Optical properties of gan epitaxial layers grown by rf-radical nitrogen source molecular beam epitaxy. In Akasaki [3], pages P-49.

[22]

S. Nakajima, T. Yang, and S. Sakai. Electronic structure of group iii nitride alloys calculated by the tight-binding method. In Akasaki [3], pages P-2.

[23]

S. Nakamura, T. Mukai, and M. Senoh. In situ monitoring and Hall measurements of GaN grown with GaN buffer layers. J. Appl. Phys., 71(11):5543-5549, 1992.

[24]

S. Nakamura. Recent developments of gan-based light-emitting diodes. In Akasaki [3], pages A-2.

[25]

D. K. Nelson, M. A. Jakobson, Yu. V. Melnik, A. V. Selkin, V. A. Dmitriev, K. Irvine, and Jr. C. H. Carter. Optical study of the excitonic states in the epitaxial gan films. In Akasaki [3], pages P-4.

[26]

N. Newman, J. Ross, and M. Rubin. Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films. Appl. Phys. Lett., 62(11):1242-1244, 1993.

[27]

H. Okamura, K. Ohta, K. Ando, W. W. Rühle, T. Nagatomo, and S. Yoshida. Gandgap energy of cubic gan. In Akasaki [3], pages P-7.

[28]

J. W. Orton, D. E. Lacklison, D. J. Dewsnip, T. S. Cheng, L. C. Jenkins, C. T. Foxon, and S. E. Hooper. Photoluminescence study of gan grown on gaas and gap substrates. In Akasaki [3], pages G-1.

[29]

J. W. Orton. Acceptor binding energy in GaN and related alloys. Semicond. Sci. Technol., 10:101, 1995.

[30]

P. Perlin, E. Litwin-Staszewska, B. Suchanek, W. Knap, J. Camassel, T. Suski, R. Piotrzkowski, I. Grzegory, S. Porowski, E. Kaminska, and J. C. Chervin. Determination of the effective mass of GaN from infrared reflectivity and Hall effect. Appl. Phys. Lett., 1996. to be published.

[31]

H. Sakai, T. Koide, H. Suzuki, M. Yamaguchi, H. Amano, and I. Akasaki. Properties of gan-based p-n junction light emitting diodes grown by rf-plasma assisted molecular beam epitaxy. In Akasaki [3], pages C-7.

[32]

International Conference on Silicon Carbide and Related Materials -- 1995, Technical Digest, Kyoto, Japan, 1995. ICSCRM-95 Organizing Comittee.

[33]

M. Shimizu, Y. Kawaguchi, K. Hiramatsu, and N. Sawaki. Movpe growth of thick homogeneous ingan directly on sapphire substrate using aln buffer layer. In Akasaki [3], pages B-7.

[34]

J. J. Song, W. Shan, and B. Goldenberg. Dynamics of photoexcited carriers in gan. In Akasaki [3], pages P-6.

[35]

J. J. Song, W. Shan, S. J. Hwang, and B. Goldenberg. Spectroscopic studies of gan grown by metalorganic chemical vapor deposition. In Akasaki [3], pages SP-3.

[36]

S. Strite and c H. Morko. GaN, AlN and InN: A review. J. Vac. Sci. Technol. B, 10(4):1237-1266, 1992.

[37]

M. Suzuki and T. Uenoyama. First-principle calculation of effective mass parameters of gan. In Akasaki [3], pages P-3.

[38]

A. L. Syrkin, J. M. Bluet, C. Dezauzier, T. Bretagnon, S. Contreras, J. L. Robert, G. Bastide, and J. Camassel. Comparative investigation of structural and electrical properties of 6H--SiC layers grown by CVD and SSM epitaxial techniques. 1995. submitted.

[39]

T. Taguchi, M. Fujimoto, Y. Yamada, S. Nakamura, and G. Shinomiya. Time-resolved electroluminescence of high-efficient ingan blue leds. In Akasaki [3], pages C-4.

[40]

H. Theisseyre, P. Perlin, M. Leszczyński, T. Suski, L. Dmowski, I. Grzegory, S. Porowski, and J. Jun. Epitaxial layers versus bulk single crystals of gan. temperature studies of lattice parameters and energy gap. Acta Physica Polonica A, 87(2):403-406, 1995.

[41]

A. M. Tsaregorodtsev, I. P. Nikitina, and M. P. Scheglov. Thermal stress and strain in iii-v nitride heterostructures grown on foreign substrates. In SCRM95 [32].

[42]

K. Uchida, A. Watanabe, F. Yano, T. Tanaka, and S. Minagawa. Characterization of nitridated layers and their influence on the growth and quality of gan. In Akasaki [3], pages B-2.

[43]

A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu, and I. Akasaki. The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer. J. Cryst. Growth, 128:391-396, 1993.

[44]

E. Woelk, D. schmitz, H. Jürgensen, and M. Razeghi. Effect of different substrates on the growth of gan by metalorganic chemical vapor deposition. In Akasaki [3], pages P-23.

[45]

H. Yaguchi, S. Miyoshi, H. Arimoto, S. Saito, H. Akiyama, K. Onabe, Y. Shiraki, and R. Ito. Nitrogen concentration dependance of photoluminescence decay time in gap1-xnx alloys. In Akasaki [3], pages G-7.

[46]

C. Yuan, T. Salagaj, W. Kroll, R. A. Stall, M. Schurmann, Y. Li, C.-Y. Hwang, W. E. Mayo, Y. Lu, S. Krishnankitty, I. K. Shmagin, and R. M. Kolbas. High quality ingan/gan double heterojunction deposition on sapphire substrates in a production scale multi-wafer rotating disc mocvd reactor. In Akasaki [3], pages P-24.

[47]

G. Y. Zhang, Y. Z. Tong, X. Z. Dang, Z. L. Xu, S. X. Jin, Z. J. Yang, S. M. Wang, H. D. Liu, Z. X. Qin, and Q. Yoshikawa. Study on photoluminescence of gan and ingan grown by lp-movpe. In Akasaki [3], pages P-26.

Ralf Schwedler.