GaInP

[1]

F. Alsina, J. Pascual, E. Massone, J. Camassel, and J. P. Andre. Optical band gap in ordered Ga_0.5In_0.5P. Jpn. J. Appl. Phys., 32, Suppl. 32-3:720-721, 1993.

[2]

H. Asai and K. Oe. Ga_xIn_1-xP liquid phase epitaxial growth on (100) gaas substrates. J. Appl. Phys., 53(10):6849-6851, 1982.

[3]

A. Gomyo, K. Kobayashi, S. Kawata, I. Hino, and T. Suzuki. Studies of Ga_xIn_1-xP layers grown by metalorganic vapor phase epitaxy: effects of v/iii ratio and growth temperature. J. Cryst. Growth, 77:367-373, 1986.

[4]

A. Gomyo, T. Suzuki, S. Iijima, H. Hotta, H. Fujii, S. Kawata, K. Kobayashi, Y. Ueno, and I. Hino. Nonexistence of long-range order in Ga_0.5In_0.5P epitaxial layers grown on (111)b and (110) gaas substrates. Jap. J. Appl. Phys., 27(12):L2370-L2372, 1988.

[5]

J. S. Juan, M. T. Tsai, C. H. Chen, R. M. Cohen, and G. B. Stringfellow. Organometallic growth and characterization of Ga_xIn_1-xP (x = 0.51, 0.65, 0.69). J. Appl. Phys., 60(4):1346-1351, 1986.

[6]

K. Kitahara, M. Hoshino, K. Kodama, and M. Ozeki. Shallow and deep donor levels in s-doped Ga_0.52In_0.48P grown by cloride vpe. Jap. J. Appl. Phys., 25(3):L191-L193, 1986.

[7]

M. Kondow, S. Minagawa, Y. Inoue, T. Nishino, and Y. Hamakawa. Anomalous temperature dependence of the ordered Ga_0.5In_0.5P photoluminescence spectrum. Appl. Phys. Lett., 54(18):1760-1762, 1989.

[8]

T. Nishino, Y. Inoue, Y. Hamakawaand M. Kondow, and S. Minagawa. Electroreflectance study of ordered Ga_0.5In_0.5P alloys grown on gaas by organometallic vapor phase epitaxy. Appl. Phys. Lett., 53(7):583-585, 1988.

[9]

S.-H. Wei and A. Zunger. Strain effects on the spectra of spontaneously ordered Ga_xIn_1-xP. Appl. Phys. Lett., 64:757, 1994.

[10]

G. W. Wicks, D. P. Bour, J. R. Shealy, and J. T. Bradshaw. Characterization by raman spectroscopy of gainp, alinp and gaas single layers and superlattices. In Gallium Arsenide and Related Compounds, volume 83 of Inst. Phys. Conf. Ser., pages 257-262, 1986.

Ralf Schwedler.